CHA5266-99F
Description
The CHA5266-99F is a three stage monolithic Ga As Medium Power Amplifier that produces 23d B linear gain and 36d Bm OIP3. It is designed for a wide range of applications, from military to mercial munication systems. The circuit is manufactured with a p HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
Main Features
- Broadband performances: 10-16GHz.
- 23d B Linear Gain.
- 26.5d Bm output power @ 1d B p.
- 36d Bm OIP3.
- DC bias: Vd=5.0Volt@Id=360m A.
- Chip size 1.81x1.37x0.1mm.
Gain and retun losses (d B)
RF IN
VD1
VD2
VD3
RF OUT
VG1
VG2
VG3
S21
S11
S22
-5
-10
-15
-20
-25
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Frequency (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear...
